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BD241BFP BD242BFP COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s FULLY MOLDED ISOLATED PACKAGE s 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS 3 DESCRIPTION 2 1 The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. TO-220FP It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD241BFP PNP BD242BFP V CER Collector-Base Voltage (R BE = 100 ) 90 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 3 A I CM Collector Peak Current 5 A IB Base Current 1 A o P t ot Total Dissipation at T c 25 C 24 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative. April 1998 1/4 BD241BFP / BD242BFP THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 5.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Te